ANODIC BONDING & SILICON FUSION BONDING ||MODULE 6 || EC 465 || KTU MEMS || LECTURE 41
FOR FULL CLASS FOR MEMS: https://www.youtube.com/playlist?list=PL2UV2EJdMQmiqKJXYU56KbT2APawSe7tr
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Hi all, we learned about surface bonding last time.
Today we will learn about anodic bonding.
Anodic bonding is used to attach the silicon wave face to thin glass or quartz substrate.
Anodic bonding provides a hermetic seal and is an inexpensive method of dye bonding.
The silicon wafer is placed on the top of a thin glass constraint base.
A high DC voltage source of about 1000 volts is applied across the set at a temperature between 450 and 900 degrees Celsius.
Anodic bonding provides a hermetic seal and is an inexpensive method of dye bonding.
Silicon fusion bonding is an effective and reliable technique for bonding two silicon wafers or substrates without the use of intermediate adhesives.

